Abstract
Atmospheric oxygen sorption in the variety of boronized graphites and boron carbide B 4C has been studied. The samples were irradiated with D-ions at the energy of 1 and 3 keV, fluence between 1 × 10 16 and 1 × 10 19 D/cm 2 at room temperature and then were exposed to air. After the irradiation with fluence, at which the deuterium reemission flux appeared, oxygen accumulation in the subsurface layer with D-ion mean range thickness was observed. The sorbed oxygen amount increased linearly with D-ion energy and boron content in the material. It is supposed that the open porosity develops under the D-ion irradiation. This porosity is responsible for air penetration into the zone of deuterium implantation. The formation of B 2O 3, as a result of water vapor interaction with B 4C precipitates, is thought to be the main mechanism of oxygen accumulation.
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