Oxygen-Related Degradation Mechanisms for On- and Off-States of Perfluoropentacene Thin-Film Transistors

Abstract

We investigated the performance degradations mechanisms in n-channel perfluoropentacene thin-film transistors (PF-pentacene TFTs) exposed to dry O2. We found that the PF-pentacene TFTs are significantly degraded when they are operated in dry O2 rather than when just exposed to dry O2. Furthermore, the performance degradation resulting from exposure to dry O2 is caused by the mobility decrease, while that with the TFT operation in dry O2 is caused by the threshold voltage (Vth) increase as well as the mobility decrease. The present results indicate that an interaction between neutral PF-pentacene and O2 molecules induces a slight mobility decrease, while that between n-doped PF-pentacene and O2 molecules predominantly brings about a significant Vth increase.