Abstract
We report here studies on the influence of oxygen pressure on the electroresistance behavior of La0.9Sr0.1MnO3 thin films fabricated by laser molecular beam epitaxy. It was found that the film deposited at lower oxygen pressure shows larger c-axis parameter, higher resistance, and more distinct electroresistance. These results reveal that the electroresistance of manganite thin films can be tuned by the conditions of film fabrication.
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