Oxygen Precipitation Studies for N-Type and Epitaxial Silicon Substrates During Simulated Cmos Cycles by Synchrotron Section Topography

Abstract

AbstractSynchrotron section topography is applied to the study of silicon wafers pulled out froma simulated advanced CMOS twin-tub process. Substrates are heavily doped with antimony and phosphorus. For comparison also high-resistivity samples are studied. Prior to epi deposition of arsenic doped layers some wafers are subjected to a three-step intrinsic gettering cycle.Section topographs show that in the lightly doped samples a denuded zone is formed by the CMOS process itself in contrast with the heavily doped ones in which the intrinsic gettering is needed.