Abstract
Substrate and epitaxial silicon wafers from silicon crystals containing oxygen concentrations ranging between 25 and 32 ppma were heat‐treated using one‐ and two‐step heat‐treatment processes. An epitaxial deposition thermal simulation heat‐treatment was also applied to the substrate wafers. The results indicate that a significant amount of preexisting microprecipitates are annihilated during the epitaxial deposition process, and the thermal history, as well as the growth conditions of the crystal, play an important role in the oxygen precipitation process. It is proposed that during epitaxial deposition, preexisting microprecipitates are dissolved by out‐diffusion of oxygen atoms from the precipitate particles as well as by the generation of excess self‐interstitials at the growing epitaxial surface, which results in retardation of the oxygen precipitation process.
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