Abstract
Heat treatment of oxygen-ion implanted CZ-silicon may be expected to induce precipitation of oxygen-rich precipitates when the peak total oxygen concentration is above the oxygen solubility limit, but not far enough above to result in a “buried” SiOx layer. We report here first results of an investigation of oxygen-rich precipitates formed in oxygenimplanted CZ-silicon given a multistep post-irradiation heat treatment with maximum temperatures of 1050°C. The implantation energy and dose were 400kV and 3xl015cm-2 respectively, yielding a peak oxygen concentration of 6.8x1019 cm-3 at a projected range of 1μm, based on LSS statistics. This concentration is about one order of magnitude above the oxygen solubility limit and three orders of magnitude below the stoicheometric oxide concentration.
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