Abstract
Oxygen precipitates in the floating-zone silicon in hydrogen ambience [FZ(H) Si] and in the neutron transmutation doping (NTD) FZ(H) Si were investigated by infrared (IR) spectroscopy at room temperature. In the intermediate temperature range, 600–850°C, the apparent activation energies of 1.4 and 1.2 eV were derived from Arrhenius plots of the product of the absorbance at 1230 cm −1 and the half-peak breadth for the formation of oxygen precipitates in the FZ(H) Si and in the NTD FZ(H) Si, respectively. The high temperature stability of the oxygen precipitates was only in the NTD FZ(H) Si. A denuded zone was obtained by denuding annealing and precipitating annealing the NTD FZ(H) Si wafers.
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