Abstract
The SiO 2-like layers were obtained by plasma-oxidation of the SiO xC y(− H) films deposited from hexamethylcyclotrisiloxane (HMCTSO) with helium and oxygen. The SiO 2-like layers were formed on as-deposited SiO xC y(− H) films within a second by oxidation using the He/O 2 atmospheric pressure dielectric barrier discharge (APDBD). The elemental ratio of oxygen to silicon in the layer was increased up to 1.95 which is closed to stoichiometry of SiO 2. The elemental composition and surface morphology were studied by means of x-ray photoelectron spectroscopy and atomic force microscopy. Wettability of the oxidized thin films was investigated by water droplet contact angle measurement. The contact angle of SiO xC y(− H) films are decreased from 63° to below 10° within a second by oxidation. Correlation between the elemental composition and the contact angle were discussed. The effects of oxidation duration and discharge generation voltage on the composition and surface morphology of the film were investigated.
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