Abstract
The effects of oxygen plasma treatment on epitaxial ZnO thin films grown by molecular beam epitaxy were studied. The Au–ZnO–In junction exhibiting ohmic behaviour before the treatment gradually changes to a Schottky junction with the increase in oxygen plasma treatment time. The crystallinity and the surface microstructure did not change to any great extent after the treatment. However, the x-ray photoelectron spectroscopy studies show the removal of conductive OH layer from the surface of ZnO films and the current–voltage characteristics of Au–ZnO–In junction exhibit the rectifying behaviour after oxygen plasma treatment. The fabricated Au–ZnO–Au ultraviolet (UV) detector was successfully tested and was observed to be sensitive to the two UV sources used. The photoresponsivities of the UV detector for the irradiation of two different power densities 350 (λ = 356 nm) and 420 µW cm−2 (λ = 254 nm) are 13.5 A W−1, 15.3 A W−1 at 5 V and 128.9 A W−1, 160 A W−1 at 10 V, respectively.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
