Abstract
The performance of organic thin film transistors (OTFTs) strongly depends on the surface states of the gate insulator. In this study, the plasma treatment of the gate surface prior to deposition of pentacene has been applied and the effects on performance investigated. Overall performance of plasma-treated OTFTs has been improved. In particular, the field-effect mobility has been enhanced to 0.05 cm2/V·s which is 10 times larger than that of as-deposited OTFTs. Moreover, the standard deviation of each parameter variation was reduced by the plasma exposure, which implies that plasma treatment renders the gate surface states uniform across the entire wafer area. However, the mobility exhibited the turn-around effect and thus became degraded after a certain exposure time. Thus, the plasma treatment can be a suitable process to enhance the performance of OTFTs if the exposure time is kept under control.
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