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Abstract
SiO 2 films containing Si nanocrystals were exposed to atomic oxygen (O) plasma at different temperatures. The photoluminescence intensity from the films increases with increasing exposure time, and then saturates at a level that depends on the exposure temperature. There are no significant changes in the PL spectrum shapes and the O-induced PL is fully recovered to its original state by thermal annealing. The results are likely to be due to a balance between defect passivation and depassivation, with the activation energy for the passivation reaction being larger than that for the depassivation reaction.
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