Oxygen migration induced effective magnetic and resistive switching boosted by graphene quantum dots

Abstract

Graphene materials have attracted considerable research interest owing to their applications in memristor and prospective spintronic devices. In this work, the bifunctional resistive and magnetic switching effect is investigated in Ag/graphene quantum dots (GQDs): graphene oxide (GO)/ITO device: (1) In the low-resistance state, the conductive filaments are formed by oxygen migration away inducing the C–C sp2 groups. (2) In the high-resistance state, the directions of magnetic moment align by increasing the C–O sp3 group. The resistive switching ratios and saturation magnetization of GQDs memristor are shown to be approximately 20 and 2.2 times higher than that of GQDs-free memristor, respectively. Tunable magnetic switching makes GO-based memristive devices boosted by GQDs a promising candidate to future voltage-controlled, low-power, and high-density spintronics devices.