Abstract
Oxygen manipulation at ferromagnetic metal (FM)/oxide heterointerfaces has been proved to be significantly effective in tailoring magnetic and transport properties. Herein, oxygen migration at the Co/SiO2 interface with the aid of post-annealing treatment induces an enhancement of the anomalous Hall effect (AHE) for Pt/[Co/Pt]2/Co/SiO2/Pt multilayers, which is identified by X-ray photoelectron spectroscopy. Nevertheless, there is not oxygen migration phenomenon at the SiO2/Co interface and the AHE is weakened due to Co–Pt interdiffusion during the annealing process for Pt/SiO2/Co/[Pt/Co]2/Pt multilayers. This work may pave the way toward the application of FM/oxide heterointerfaces in spintronic devices.
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