Abstract
To enhance graphene's functionalities and explore potential applications, modifying its structure through ion irradiation has evolved as a favorable method. In the present study, graphene film grown on a copper substrate was transferred to a SiO2/Si substrate for conducting oxygen ion irradiation experiment at 100-keV. The research investigates the impact of varying oxygen ion fluences on CVD-grown graphene films. Characterization through Raman spectroscopy, confirmed increased D peak intensity and alterations in the 2D peak at higher fluences, indicating defects and lattice distortion induced by irradiation.
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