Abstract
This paper presents the effect of oxygen implantation in GaN epitaxial layer on sapphire substrate. Oxygen implantation was done at 80 keV in GaN sample with 5 × 1014 cm−2 dose. To reduce the implantation damage annealing of the sample was carried at 900 °C for 45 s. High Resolution X-Ray Diffraction (HRXRD), Raman Scattering and cathodoluminescence (CL) study has been done before and after annealing of implanted sample and compared with unimplanted GaN. Tensile strain was observed in the implanted sample by HRXRD and UV excited Raman scattering due to formation of vacancy clusters. After annealing implantation induced damage was restored and yellow luminescence (point defects) by CL were observed in the GaN sample.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
