Abstract
In the solid–vapor phase equilibria between SiC and O2 system, there exists a region where the reaction (2+x)SiC+O2→(2+x)Si↑+ 2CO↑+ xC↓ takes place [Y. W. Song and F. W. Smith: J. Am. Ceram. Soc. 88 (2005) 1864]. By tuning the temperature and the oxygen pressure used in the graphitization annealing into this region, we have succeeded in the growth of epitaxial graphene on SiC crystals at 1000 °C, which is lower, by 250 °C or more, than the conventional epitaxial graphene method. The method is especially useful to formation of epitaxial graphene on silicon (GOS), which requires a lower graphitization temperature because of the Si substrate as well as of its mission to attain compatibility with Si technology.
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