Abstract
The ambient gas effect in SiOx-based resistive switching memory has been studied. After the electroforming process, resistive switching behavior functions in vacuum as well as in nitrogen without dramatic degradation. However, introducing an oxygen-nitrogen ambient suppresses resistive switching behavior at pressures above 1 Torr. Resistive switching is fully reestablished in oxygen-exposed devices after a vacuum recovery step. The failure phenomena can be described by Monte Carlo simulation using bi-modal statistics to enable feature distribution modeling of failure modes. Design criteria and guidelines are identified for packaging of future oxygen-sensor and of nonvolatile memory applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.