Abstract
ABSTRACTThe incorporation mechanism of oxygen into MBE-grown AlGaAs layers was systematically studied by changing the growth temperature and AlAs mole fraction. It was found that segregation of oxygen atoms strongly influences oxygen incorporation. By taking into account the surface segregation of oxygen, all of the particular characteristics observed in the oxygen incorporation into MBE-grown AlGaAs layers can be explained including a peak and a dip formation in the profile. Oxygen atoms accumulate on the surface of the substrate due to surface segregation and the number multiplied by the coefficient of surface segregation determines the oxygen incorporation.
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