Abstract
The incorporation of oxygen into thin epitaxial Si and heteroepitaxial Si1−xGex layers deposited, applying a conventional atmospheric pressure process, from silane, germane, hydrogen chloride, and hydrogen gas mixtures in a temperature range from 1070 to 720 °C is analyzed. The role of oxygen for defect formation has been shown by means of a correlation between high resolution defect analysis using transmission electron microscopy and quantitative oxygen depth profiling using Auger electron spectroscopy and secondary ion mass spectrometry. In the low-temperature region traces of residual H2O vapor lead to oxygen precipitation. These precipitates are the origin of extended lattice defects such as stacking faults and microtwins and can result in highly defective films with polycrystalline inclusions and increased surface roughness. It was found that, in order to prevent the observed defects, it is necessary to keep the oxygen concentration below 3×1019 cm−3. However, by carefully controlling the experimental parameters it is also possible to realize nearly defect-free structures with high oxygen concentrations up to 1020 cm−3.
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