Abstract
Results are reported of an experimental study of axial magnetic field effects (including the effect of a weak magnetic field) on oxygen in 105–155 mm diameter silicon crystals grown in a conventional Czochralski crystal puller and in a puller with a double-crucible arrangement. The oxygen concentration and distribution in the crystals depend upon the conditions of oxygen-rich melt transport from the crucible wall to the melt-crystal interface. A regime of low oxygen (down to 2×10 17 cm -3), large diameter crystal growth has been found. The features of oxygen distribution in the crystals are qualitatively explained.
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