Oxygen implantation to suppress parasitic bipolar action in CMOS

Abstract

Oxygen implantation and subsequent epitaxial silicon deposition have been developed to improve CMOS latchup prevention through reducing the current gains of parasitic bipolar transistors. The buried oxygen implanted layer is well confined, and defects do not extend into the epitaxial silicon layer. The device characteristics of the n- and p-MOSFETs fabricated on a wafer with the oxygen implantation are therefore not affected by the buried implanted layer. The oxygen implanted layer can reduce the minority-carrier lifetime and hence decrease the current gain of the lateral parasitic bipolar transistor. In addition, it introduces a potential barrier which decreases the current collected at the frontside contact of the vertical parasitic bipolar transistor. The common base current gain is reduced by 50% and 80% for the lateral and the vertical parasitic bipolar transistors, respectively. As a consequence, the CMOS latchup immunity is significantly improved.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>