Abstract
The composition and atomic depth distributions of ultrathin zirconia films $(\ensuremath{\sim}30 \mathrm{\AA{}}\mathrm{})$ deposited on Si(100) have been investigated using medium-energy ion scattering (MEIS). Reoxidation in ${}^{18}{\mathrm{O}}_{2}$ permits the oxygen incorporation, exchange, and mobility to be followed due to the isotope sensitivity of the MEIS technique. These quantitative studies showed that significant interfacial ${\mathrm{SiO}}_{2}$ growth results when reoxidizing samples at temperatures as low as $500\ifmmode^\circ\else\textdegree\fi{}\mathrm{C},$ and that this growth saturates in time and pressure but increases with temperature. Substantial isotope exchange was also observed under various experimental conditions. The results are discussed taking into account published data on the bulk and grain boundary diffusion of O in monoclinic and tetragonal zirconia, the diffusivity of O in ${\mathrm{SiO}}_{2},$ and the nanocrystallinity of the films.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
