Abstract
The diffusion of oxygen in silicon is an important process with respect to the planar technology of semiconductor devices. A sensitive method was developed to measure oxygen concentration profiles in silicon by means of the nuclear reaction 18O( p,n) 18F. By this activation technique oxygen concentrations as low as 1015 atoms cm−3 can be registered in a silicon layer of 5 μ thickness. In a subsection we discuss the difficulties and limitations caused by the always present natural oxide layer on the surface of the sample. The temperature dependence of the diffusion constant has been determined between 1000 and 1280 °C. An activation energy for the diffusion of oxygen in silicon of 3.15 eV has been extracted from these data. In addition, the influence of other dopants as Ga, Al, B, and P to the oxygen diffusion has been investigated. The deviations we found in the oxygen concentrations appear to be produced by the preparation techniques of the samples rather than by a direct influence of the different dopants.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
