Abstract
In this Letter, bilayered Cu 2O/CuO thin films were grown on Nb doped SrTiO 3 (Nb:STO) substrates by plasma assisted molecular beam epitaxy. The current–voltage characteristics of Pt/Cu 2O/CuO/Nb:STO devices show reproducible and pronounced current–voltage hysteresis which was induced by the CuO/Nb:STO junctions. By comparing the current–voltage curves of the bilayered and single-layered CuO thin films, we attribute the prominent switching behavior to the oxygen-vacancies-mediated-carriers-trapped-detrapped process with the aid of the applied forward (reversed) bias voltage.
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