Abstract

A compact microwave plasma light source for vacuum ultraviolet absorption spectroscopy (VUVAS) technique was developed to measure the absolute oxygen atomic density in N2/O2 gas mixture surface-wave plasma. With self-absorption calibrated VUVAS technique based on the theory of resonance escape factor, the absolute oxygen atomic densities were consistently analyzed using two adjacent oxygen atom emissions at 130.22 and 130.49 nm for different N2/O2 gas mixture ratios in surface-wave plasma (SWP). Results of the absolute oxygen atomic densities clearly indicate a strong correlation with previously observed etching results of spore-forming microorganisms under the same N2/O2 SWP discharge conditions.

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