Abstract
Cost-effective chemical bath deposition (CBD) technique have been utilized to fabricate ZnO thin films on ultrasonically cleaned glass substrates and successfully applied as channel layer in thin film transistors (TFTs). The deposited films are characterized by XRD and SEM analysis. High -k rare earth oxide La2O3 is used as gate dielectric. The ZnO films are annealed at ambient and oxygen atmosphere at 500°C for one hour. The I-V characteristics of the TFTs are studied and various electrical parameters such as field effect mobility, threshold voltage, sub-threshold swing, drain current ON/OFF ratio and transconductance are evaluated.
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