Oxygen and nitrogen doping in single wall carbon nanotubes: An efficient stable field emitter

Abstract

Abstract Vertically aligned single wall Carbon Nanotubes (v-SWCNTs) were synthesized by plasma enhanced chemical vapour deposition system. Oxygen and nitrogen molecule inclusion in v-SWCNTs was performed in ultra high vacuum by radio frequency (RF) sputtering system. The creation of defects induced by oxygen and nitrogen plasma ions also drives the formation of different oxygen and nitrogen species at the SWCNTs sidewall surface as well as SWCNTs tips where incorporation is more efficient. The G/D ratio, radial breathing mode and other oxygen and nitrogen characteristic Raman modes were analyzed from Raman spectra. The type of attachments was also interpreted from fourier transform infrared spectroscopy and the electronic 1s core levels of oxygen and nitrogen with carbon in X-ray photoelectron spectroscopy. The effect of oxygen and nitrogen inclusion on the surface of SWCNTs was investigated in terms of its correlation in the enhancement of field emission characteristics. The analysis was done on the comparison of change in field enhancement factor of as-grown SWCNTs and plasma induced O-&N-SWCNTs. The results show drastic enhancement in current density at low turn on field with long term emission current stability. Our results give very unique improvement in field emission display devices using SWCNTs with simple doping effects.