Oxygen and Iron Redistribution upon Thermal Treatment in Iron Implanted Silicon

Abstract

AbstractIn order to study the iron-oxygen interaction and their redistribution in silicon, different doses of 100 keV iron ions have been implanted into CZ silicon substrates, and subsequently annealed. The redistribution of iron and oxygen upon thermal treatment in nitrogen atmosphere was monitored with SIMS and FTIR measurements. A significant gettering of iron as well as of oxygen into the layer close to the implanted surface has been found only for doses exceeding the critical fluence, therefore indicating that the structural disorder and associated lattice strain field are the main driving forces for gettering mechanism. It has been found, however, that for doses above the critical fluence not all iron ions have been trapped into the damaged region, but a significant part of them have diffused into the bulk of the material, unaffected by gettered oxygen.