Abstract
AbstractThe characteristic features of production processes of thermal donors in Czochralski grown silicon heat treated at T=450°C under hydrostatic pressures of about 1 GPa are studied. Two families of oxygen‐related donors are formed under compressive stress. The first one is the well‐known thermal double donors whose production rate is increased by a factor of five as compared with that observed at atmospheric pressure. Along with them, new thermal donors with similar energy states are also produced. This family was found to be a dominant contributor to the thermal donors formed under compressive stress. The features of formation processes of both kinds of thermal donors are briefly discussed.
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