Abstract
The interaction of oxygen with thin cobalt films supported on oxidized Si(100) substrates was studied using Auger electron spectroscopy (AES) and work function changes (Δφ) at 130 K and 300 K. The oxygen uptake curves showed a constant sticking coefficient (s0) up to ≊15 L, indicating adsorption through a molecular precursor. At 300 K, s0=0.2, while at 130 K, 0.5≥s0≥0.3, depending on the dosing pressure. Up to ≊10 L O2 at 300 K, the work function increased 0.20 eV. At that coverage, the Co MVV Auger transitions indicated an oxide formation. From this coverage onwards, the work function decreased, saturating at ≊80 L with a value ≊−1.2 eV below the clean Co surface, pointing to oxidation.
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