Oxygen Adsorption Effect of Amorphous InGaZnO Thin-Film Transistors

Abstract

The effect of oxygen adsorption at the back channel of a-IGZO thin-film transistors (TFTs) is investigated. It is shown that for TFTs with the channel layer sputter-deposited at a high O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /Ar flow rate ratio (RO/Ar), the threshold voltages in vacuum and O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ambient do not show any difference; for devices fabricated at a low RO/Ar, the threshold voltages in vacuum are lower than those in O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> . In addition, the devices in O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> show a more significant threshold voltage shift than those in vacuum do under a positive gate bias stress. The surface-state model is used to explain this observation. It is inferred that the oxygen adsorptions are physical and chemical, respectively, in the high-and low-RO/Ar cases, and the transition from physical to chemical adsorption occurs when a positive gate bias stress is applied.