Abstract
Photocurrents emerging during the formation of anodic oxide films (AOF) on such valve metals as W, Ti, Zr, Nb, Ta are measured during an increase (direct run) and a decrease (reverse run of voltammetric curves) in the anodic potential. Capacitances of AOF formed at certain potentials are measured at potentials below the AOF formation potential. Effect of semiconductor properties on the AOF growth is considered through the formation of a Schottky barrier at the oxide/electrolyte interface. Calculated thicknesses of AOF and the depleted layer are compared. The donor-concentration drop in AOF with the distance from the metal/oxide interface is a condition for the growth of thick semiconductor oxide films. The measured potential dependence of the semiconductor-film capacitance is used to plot the donor concentration drop as a function of the distance from the Nb2O5/Nb interface in the oxide layer on a niobium electrode.
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