Abstract
Abstract The objective of this work is to elucidate the possibility to passivate the surface states of porous Si (PSi) by thermal oxidation to be used as a passive host matrix. It is known that a large contribution to the Photoluminescence (PL) of PSi comes from defects at the surface. This PL could overlap the PL of guest materials making it difficult to identify the details of the PL spectrum of the guest. We report on an experimental study about the effect of thermal oxidation at low temperature on the PL of PSi and on the functionalization of oxidized PSi with fluorescein. The background PL is minimized allowing a better detection of fluorescein molecules adsorbed on oxidized PSi.
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