Abstract
Numerous studies have addressed the utilization of oxide thin-film transistor (TFT)-based complementary logic circuits that are based on two-dimensional (2D) planar structures. However, there are fundamental limits to the 2D planar structured complementary logic circuits, such as a large dimension and a large parasitic resistance. This work demonstrated a vertically stacked three-dimensional complementary inverter composed of a p-channel tin monoxide (SnO) TFT and an n-channel indium-gallium-zinc oxide (IGZO) TFT. A bottom-gate p-channel SnO TFT was formed on the top-gate n-channel IGZO TFT with a shared common gate electrode. The fabricated vertically stacked complementary inverter exhibited full swing characteristics with a voltage gain of ~33.6, a high noise margin of 3.13 V, and a low noise margin of 3.16 V at a supplied voltage of 10 V. The achieved voltage gain of the fabricated complementary inverter was higher than that of the vertically stacked complementary inverters composed of other oxide TFTs in previous works. In addition, we showed that the vertically stacked complementary inverter exhibited excellent visible-light photoresponse. This indicates that the oxide TFT-based vertically stacked complementary inverter can be used as a sensitive photo-sensor operating in the visible spectral range with the voltage read-out scheme.
Highlights
Oxide-semiconductor-based thin-film transistors (TFTs) are promising devices for the implementation of electronic circuits in large areas owing to their attractive properties such as high carrier mobility, high uniformity, and low-temperature process compatibility [1,2,3,4,5]
The experimental realization of 3D stacked structure remains challenging, and only a few research groups have reported vertically stacked complementary inverters composed of oxide TFTs or oxide/organic TFTs [14,15,16,17,19,20]
To the best of our knowledge, there exists no experimental demonstration of the 3D stacked complementary inverter using indium-gallium-zinc oxide (IGZO) TFT and tin monoxide (SnO) TFT, that are the most representative n-channel and p-channel oxide TFTs
Summary
Oxide-semiconductor-based thin-film transistors (TFTs) are promising devices for the implementation of electronic circuits in large areas owing to their attractive properties such as high carrier mobility, high uniformity, and low-temperature process compatibility [1,2,3,4,5]. While most oxide TFT-based complementary logic circuits reported far were based on two-dimensional (2D) planar structures, there exist fundamental limits to the. Lin et al [18] showed that the obtained parasitic capacitance of the 3D stacked silicon complementary inverter was lower than that of the 2D planar structure. The experimental realization of 3D stacked structure remains challenging, and only a few research groups have reported vertically stacked complementary inverters composed of oxide TFTs or oxide/organic TFTs [14,15,16,17,19,20]. The obtained results show that the fabricated inverter can be used as a sensitive visible light sensor using the voltage read-out scheme
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