Abstract
This work investigates the interface properties in a metal oxide semiconductor capacitor (MOS-C) device with a 3 nm HfAlO/0.5 nm SiO2/Si stacks prepared by various processing conditions. The impact of different Al doping, different post annealing temperatures and different deposition steps and stacks was studied. Equivalent oxide thickness (EOT) and flat band voltage (V FB) were obtained from capacitance-voltage measurements. A simple approach was used to address the error introduced by the series resistance（R s）associated with the substrate and contact while carefully monitoring the impact of the tunneling current. The interface state density (D it) was calculated by the conductance method. The observed D it seems to be dependent on the structure of hafnium aluminum oxide film. The amorphous structure has the lowest D it tetragonal HfO2 (t-HfO2) has the highest D it and the D it values of other structures are within the highest and lowest values.
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