Abstract
Heterostructures consisting of p-InSe and native oxide were formed by thermal oxidation of indium selenide crystals in air. Long-term (for 1–5 days) oxidation of InSe substrates at 450°C leads to changes in both the photosensitivity spectral band and the photoelectric parameters of the heterostructures compared to samples oxidized for 5–15 min. These changes are due to the layer-by-layer formation of additional oxide phases on the semiconductor surface. For the best heterostructures, the open-circuit voltage attains 0.6 V and the short-circuit current density is 30–35 mA/cm2 under saturation conditions. The electrical characteristics of the heterostructures are distorted by the effect of series resistance, which complicates the determination of the potential-barrier height and the mechanism of current flow through the barrier.
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