Abstract
AbstractThis work reports on the formation of Si-nanocrystals within silicon nitride layers by low-energy Si ion implantation. Electrical characterization of oxide/Si-nanocrystal-nitride/oxide dielectric stacks demonstrates regions of negative differential resistance at low-fields. In addition, the memory characteristics in terms of charge trapping, write/erase response and retention properties of the dielectric stacks were recorded. The results indicate the large potential of the low-energy ion beam synthesis method in nitride memory technology.
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