Abstract
This review focuses on oxide memristors for resistive random access memory (ReRAM). Possi-ble practical implementations of ReRAM and the problem of leakage through neighboring elements in ReRAM are considered. The main types of resistive switching in memristors are briefly described and the main mechanisms of resistive switching are analyzed. The main characteristics of memristors required for ReRAM are also described. Some memristor structures based on oxides of titanium, silicon, tantalum, and hafnium, as well as multilayer oxide structures are analyzed. The current problems in the creation of ReRAM are highlighted.
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