Abstract
Small bubbles in argon-implanted aluminium have been found to contain thin oxide membranes. These membranes lie on {111] planes of the aluminium and are stable to above 500 ° C. It is shown that sufficient oxygen will be knocked-in during argon implantation to precipitate platelets of oxide, on which the bubbles nucleate. This oxygen knock-in mechanism could account for the hitherto surprising stability of helium bubbles in aluminium.
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