Abstract
Electronic grade wafers of 6H SiC have been given asurface oxide layer on the carbon face by either conventionalthermal oxidation or low-temperature plasma oxidation. Transmissionelectron microscopy, energy-dispersive x-ray and parallel electron energy loss,have been used to characterize thelayer and its interface with the parent carbide. In both casesthe oxide is close to Si2CO6 in composition but has ahigher oxygen content at the surface. The plasma-grown oxidedisplays a higher proportion of p-bonded carbon than theSiC substrate does.
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