Abstract
A thin oxidized layer between Au and p-type ZnSe improves the ohmic contacts. The oxide layer was formed by plasma oxidation. The concentration of recombination centers at the interface was decreased by oxidation and alloy reaction was not observed. The Schottky barrier-height for Au/n-type ZnSe was increased by introducing the oxide interfacial layer; the increase of the barrier-height depended on the carrier concentration. These results suggest that a p-type layer was formed by oxidation at the ZnSe surface and a relatively high concentration of holes facilities making ohmic contacts to p-type ZnSe.
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