Oxide formation on the silicon (111) surface studied by Auger electron spectroscopy and by low energy electron loss spectroscopy

Abstract

Core electron and valence electron excitation spectra measured using low energy electron loss spectroscopy in combination with Auger electron spectroscopy were used to study oxide formation on clean crystalline silicon. The chemical bonds formed in the various oxidation stages are described by localized molecular states. SiO double bonds, Si—O bonds of the type found in SiO 4 tetrahedra, Si—Si bonds and broken Si—O bonds were detected.