Abstract
Previous experiments have shown a link between oxidation and strength changes in single crystal silicon nanostructures but provided no clues as to the mechanisms leading to this relationship. Through a mix of atomic force microscope based fracture strength experiments, molecular dynamics modeling, and comparisons to past experiments we have shown that the previously described strength decrease is a result of oxidation induced roughening of an initially flat silicon (1 1 1) surface and we have shown this effect to be transient. In a fully developed native oxide the Si-SiO2 interface flattens. As a result the strength recovers with some indication that it becomes slightly stronger than in its initially hydrogen terminated state.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
