Abstract
A new mid-infrared (MIR) Vertical Cavity Surface Emitting Laser (VCSEL) structure is proposed. We have integrated to the VCSEL structure both an oxide aperture for lateral confinement, and a sub-wavelength high-contrast-grating top mirror. Upon the GaSb-based half-VCSEL, we have grown a metamorphic AlGaAs heterostructure to enable thermal oxidation and grating mirror fabrication steps. A methodology based on optimization and anti-optimization methods has been used to design the optical grating, with improved parameter tolerances regarding processing errors. Finally, we show the complete fabrication of an electrically-pumped MIR monolithic VCSEL structure implementing both oxide confinement and a subwavelength grating top mirror.
Highlights
Vertical-cavity surface-emitting lasers (VCSEL) have already demonstrated their excellent ability as compact sources for molecular spectroscopic measurements
We have integrated to the Vertical Cavity Surface Emitting Laser (VCSEL) structure both an oxide aperture for lateral confinement, and a subwavelength high-contrast-grating top mirror
A methodology based on optimization and anti-optimization methods has been used to design the optical grating, with improved parameter tolerances regarding processing errors
Summary
Vertical-cavity surface-emitting lasers (VCSEL) have already demonstrated their excellent ability as compact sources for molecular spectroscopic measurements. We propose to integrate both a lateral oxide electrical / optical confinement, and a sub-wavelength grating high contrast mirror (HCG), within a Sb-based VCSEL structure emitting in the MIR spectral range. In order to define a simple and proven way for electro-optical confinement, we propose to use a metamorphic approach with (Al)GaAs layer to be oxidized [3,4] This approach combines the advantages of a well-controlled oxidation of an AlGaAs layer with the high-efficiency of a Sb-based active region for emission in the MIR. We present the results obtained on electrically-pumped characterizations of MIR-VCSELs structures, for which we included an oxide aperture for lateral confinement and a HCG as the top high-reflectivity output mirror, both based on AlxOy/GaAs heterostructures. The GaAs grating layer is not completely etched resulting in a GaAs sublayer of thickness TL to prevent delamination during the oxidation process and enhance mirror performances
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