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Abstract
This review article summarizes the recent development in resistance switching (RS) in several binary oxide thin film systems. Several oxides such as ZnO, TiO2, TaOx based resistive switches are being considered as potential candidates for memristive devices, which are alternative to conventional flash memories. A comparative review of the memristive properties of transition metal oxide (TMO) based thin films grown by sputtering, atomic layer deposition (ALD), metal organic chemical vapor deposition (MOCVD), and chemical bath deposition (CBD) methods has been illustrated. Sputtered ZnO thin films show promising resistive switching behaviors, showing high on/off ratios (10–104), good endurance, and low operating voltages. Further among sputtering, dual ion beam sputtering (DIBS) method of fabricating memristor exhibited high endurance and retention performances, and also ensures ease of fabrication. Conduction mechanism of different TMOs based devices has been discussed. Homogeneous and filamentary resistive switching, interface limited conduction as discussed in the last decade for the memristive behavior TMOs has been discussed. Memristors as discrete memory cells or in form of cross-bars have found many applications as non-volatile memory or as synaptic cells for neuromorphic applications etc.
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