Abstract
Exploitation of the oxidation behaviour in an environmentally sensitive semiconductor is significant to modulate its electronic properties and develop unique applications. Here, we demonstrate a native oxidation-inspired InSe field-effect transistor as an artificial synapse in device level that benefits from the boosted charge trapping under ambient conditions. A thin InOx layer is confirmed under the InSe channel, which can serve as an effective charge trapping layer for information storage. The dynamic characteristic measurement is further performed to reveal the corresponding uniform charge trapping and releasing process, which coincides with its surface-effect-governed carrier fluctuations. As a result, the oxide-decorated InSe device exhibits nonvolatile memory characteristics with flexible programming/erasing operations. Furthermore, an InSe-based artificial synapse is implemented to emulate the essential synaptic functions. The pattern recognition capability of the designed artificial neural network is believed to provide an excellent paradigm for ultra-sensitive van der Waals materials to develop electric-modulated neuromorphic computation architectures.
Highlights
Exploitation of the oxidation behaviour in an environmentally sensitive semiconductor is significant to modulate its electronic properties and develop unique applications
The basic synaptic functions, which include short-term plasticity (STP) of paired-pulse faciliation (PPF) and the long-term plasticity (LTP) of spiketiming-dependent plasticity (STDP), are successfully mimicked by this oxidation-inspired indium selenide (InSe) artificial synaptic device, as well as the system-level pattern recognition based on the artificial neural network (ANN)
The exfoliated InSe flake was intentionally selected as 10–20 layers under optical microscopy (OM) for improved device properties[41]
Summary
Exploitation of the oxidation behaviour in an environmentally sensitive semiconductor is significant to modulate its electronic properties and develop unique applications. Its acknowledged air-instability and large surface to volume ratio, resulting in severe performance degradation and hysteretic behaviour, attract much researchers’ attention on how to protect it from contact with air for steady electrical properties, including our team To put this in perspective, the environmental sensitivity provides itself favourable conditions for introducing into oxidation layer; quantitatively analyzing and comprehending carrier traps in this thin oxide layer is of great significance in particular for van der Waals materials to further limit its negative impact, even utilize it for enhancing the performance and applications of electronic devices[14,35,36,37,38,39,40]. The ingenious use of the oxidation layer in the InSe FET offers a new opportunity for air-unstable layered semiconductors to bulid a simpler configuration in the field of data storage and next-generation neuromorphic computation
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
