Oxidation temperature dependent restructuring of the Pb defect at the (1 1 1) [formula omitted] interface

Abstract

Previous electron spin resonance work has unveiled distinct variations in g ‖ of the P b interface defects (∘Si=Si 3) in (1 1 1) Si SiO 2 structures upon upwards crossing of the oxidation temperature range T ox = 750–850°C. These are a drop in g ‖ of δg ‖ ∼ 0.00008 and a collapse in the r.m.s. spread σg ‖ ( T ox ≤ 750°C)∼0.00032, referring to an average restructuring of the P b defects. Interpretation along the theory of Ishii et al. indicated the observed drop δg ‖∼0.00008 to correspond to an average back relaxation of the defect Si atom towards a more planar structure over δh∼0.13 A ̊ , while σg ‖ would imply a “vertical” positional spread σh∼0.53 A ̊ . These results are reinterpreted here in terms of a recent improved theory for the Si unpaired bond. While leaving the general conclusions unaltered, the improved approach leads to an order of magnitude lower variations in h and P b energy level distribution.