Abstract
The oxidation state of Cu in the homologous Tl2Ba2Can-1CunO2n+4+δ (n = 1 - 4) series has been analyzed in terms of the bond valence sums. It is found that the totally mobile hole concentration nH,t of the type-I CuO2 planes at the optimal level increases with increasing number of CuO2 layers per unit cell from 1 to 3, and the largest nH,t is observed to be 0.474 when n = 3, which just corresponds to the highest Tc in the bilayer Tl-based materials, and then it decreases with the increase of n. It is indicated that the correlation between the maximum value of Tc and n is similar to that between nH,t and n.
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