Abstract
In this paper, the principle, device structure and the fabrication of bulk micro machined accelerometer are presented. It has been observed that the same oxidation process which resulted in low leakage current for small area devices gave rise to high leakage current in the large area Silicon Fusion Bonded structures. Using large area MOS devices as the test vehicle, it is shown that such high leakage current problems can be sorted out by carrying out oxidation by a two-step dry-wet oxidation process at 10000C. It is also shown that the two-step oxidation process leads to MOS capacitors with leakage currents considerably smaller than the devices fabricated with totally dry oxidation or totally wet oxidation process.KeywordsSilicon Fusion BondingoxidationaccelerometerSilicon On InsulatorMEMS
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