Abstract
CrN and Cr2N layers of 130–250 nm thickness were deposited onto silicon substrates via reactive magnetron sputtering. Their oxidation at 500–800 °C in air was studied via depth profiling nuclear methods. The Cr and N concentration profiles were determined by Rutherford backscattering spectrometry and resonant nuclear reaction analysis, respectively. In the case of oxidizing Cr2N, the nitrogen content behind the Cr2O3/Cr2N interface increases to the stoichiometry of CrN. At a Cr2O3 layer thickness of about half the as-deposited Cr2N layer, the oxidation rate is reduced to that fo CrN.
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